Diodes Incorporated
TSOT26

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DMN62D2UVTQ

60V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: general-purpose interfacing switches and power-management functions.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN62D2UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General-purpose interfacing switches
  • Power-management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.455 A
PD @TA = +25°C (W) 0.9 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 @ 5V mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 4000 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.8 nC
CISS Typ (pF) 41 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf