Diodes Incorporated
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DMN62D1LFB

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance,making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Load Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.41 A
PD @TA = +25°C (W) 0.5 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@4V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.45 nC
CISS Typ (pF) 32 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products