Diodes Incorporated
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This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.


  • DC-DC Converters
  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Load switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 60 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 0.54 A
    PD @TA = +25°C (W) 0.89 W
    RDS(ON)Max@ VGS(10V)(mΩ) 2000 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 3000 (@5V) mΩ
    |VGS(TH)| Max (V) 2.5 V
    QG Typ @ |VGS| = 4.5V (nC) 0.39 nC
    QG Typ @ |VGS| = 10V (nC) 0.87 nC
    CISS Typ (pF) 30.2 @ 25V pF

    Related Content


    Technical Documents

    SPICE Model

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
    Additional Wafer Source for Select Products.