Diodes Incorporated — Analog and discrete power solutions
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

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DMN61D9U (NRND)

NRND = Not Recommended for New Design

Alternative Part: DMN62D2U,

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V)

30

CISS Typ (pF)

28.5

ESD Diodes (Y|N)

Yes

Polarity

N

QG Typ @ |VGS| = 4.5V (nC)

0.4

AEC Qualified

Yes

RDS(ON)Max@ VGS(1.8V)  (mΩ)

3500

RDS(ON)Max@ VGS(2.5V)  (mΩ)

2500

RDS(ON)Max@ VGS(4.5V)  (mΩ)

2000 (@5V)

|VDS| (V)

60

|VGS| (±V)

20

|VGS(TH)| Max (V)

1

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2579 2022-08-29 2023-02-28 Device End of Life (EOL)
PCN-2456 2020-05-29 2020-08-29 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.