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DMN60H160H

600V N-Channel Enhancement Mode Field MOSFET

Datasheet

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Description

This new generation MOSFET uses advanced planar technology and provides excellent high voltage and fast switching, making it ideal for small-signal and level shift applications.

Feature(s)

Low Input Capacitance
High BV_DSS Rating for Power Application
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Backlighting
DC-DC converters
Power-management functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	600 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.07 A
P_D @T_A = +25°C (W)	1.25 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	160000 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	190000 (@ 5V) mΩ
\|V_GS(TH)\| Min (V)	3 V
\|V_GS(TH)\| Max (V)	4.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	2.4 nC
C_ISS Typ (pF)	30.4 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN60H160H.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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