Diodes Incorporated
SOT23

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DMN6075S

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.5 A
PD @TA = +25°C (W) 1.15 W
RDS(ON)Max@ VGS(10V)(mΩ) 85 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 120 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 5.6 nC
QG Typ @ |VGS| = 10V (nC) 12.3 nC
CISS Typ (pF) 606 @ 20V pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2374 2018-12-07 2019-03-07 Qualification of "Diodes Technology (Cheng Du) Company Limited"
(CAT) as an Additional Assembly & Test Site, Conversion to Palladium Coated Copper Bond Wire with New Molding Compound, and Qualification of Alternative Die Source on Select Products