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DMN6075S

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) On Request
Polarity N
ESD Diodes (Y|N) No
VDS (V) 60 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 2.5 A
PD @TA = +25°C (W) 1.15 W
RDS(ON)Max @ VGS(10V)(mΩ) 85 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 120 mΩ
VGS (th) Max (V) 3 V
QG Typ @ VGS = 4.5V (nC) 5.6 nC
QG Typ@ VGS = 10V(nC) 12.3 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN6075S-7

DMN6075S-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Future Electronics - Asia 2583000 9/21/2021 Singapore Contact Sales
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2374 2018-12-07 2019-03-07 Qualification of "Diodes Technology (Cheng Du) Company Limited"
(CAT) as an Additional Assembly & Test Site, Conversion to Palladium Coated Copper Bond Wire with New Molding Compound, and Qualification of Alternative Die Source on Select Products