Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMN6070SSDQ

60V Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by PPAP.

100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN6070SSDQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	3.3 A
P_D @T_A = +25°C (W)	1.2 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	87 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	100 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	12.3 nC
C_ISS Typ (pF)	588 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMN6070SSDQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile