Diodes Incorporated
PowerDI3333 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI3333-8.png
Back to MOSFET Master Table

DMN6069SFVWQ

60V SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON)—Ensures Minimal On-State Losses
  • Small Form Factor Thermally Efficient Package Enables Higher
    Density End Products
  • Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
    Smaller End Product
  • Wettable Flank for Improved Optical Inspections
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN6069SFVWQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power-Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4 A
PD @TA = +25°C (W) 2.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 69 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 100 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6.4 nC
QG Typ @ |VGS| = 10V (nC) 14 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC