60V N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: motor controls, transformer driving switches, DC-DC converters, power-management functions, and uninterrupted power supplies.
Compliance (Only Automotive Supports PPAP) |
Automotive |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
6 A |
PD @TA = +25°C (W) |
4.12 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
68 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
100 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
5.55 nC |
QG Typ @ |VGS| = 10V (nC) |
10.3 nC |
CISS Typ (pF) |
502 pF |
CISS Condition @|VDS| (V) |
30 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2762 | 2025-10-15 | 2025-10-15 | Add Ejector Pin Mark on TO-252 Packaged Products Manufactured at Diodes Internal Assembly and Test Site (SAT) |