N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 60V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance and 0.6mm profile – ideal for low profile applications . This device is ideally suited to Handheld and lighten application.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 5.3 A |
PD @TA = +25°C (W) | 2.03 W |
RDS(ON)Max@ VGS(10V)(mΩ) | 38 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 47 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 10.4 nC |
QG Typ @ |VGS| = 10V (nC) | 22.4 nC |
CISS Typ (pF) | 1287 @ 25V pF |