Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)

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DMN6040SFDE

N-Channel Enhancement Mode MOSFET

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Description

This new generation 60V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance and 0.6mm profile – ideal for low profile applications . This device is ideally suited to Handheld and lighten application.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Handheld application

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

60 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

5.3 A

PD @TA = +25°C (W)

2.03 W

RDS(ON)Max@ VGS(10V)  (mΩ)

38 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

47 mΩ

|VGS(TH)| Max (V)

3 V

QG Typ @ |VGS| = 4.5V (nC)

10.4 nC

QG Typ @ |VGS| = 10V (nC)

22.4 nC

CISS Typ (pF)

1287 @ 25V pF

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.