Diodes Incorporated
TO252 DPAK

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DMN6017SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance 
  • Low Input Capacitance 
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Industrial

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 11
|IDS| @TC = +25°C (A) 43
PD @TA = +25°C (W) 3.3
PD @TC = +25°C (W) 50
RDS(ON)Max@ VGS(10V)(mΩ) 18 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 20 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 26 nC
QG Typ @ |VGS| = 10V (nC) 55 nC
CISS Typ (pF) 2711 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2475 2020-08-06 2020-11-06 Qualification of Assembly & Test Site Transfer for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.

FAQs

Related Application FAQs