Diodes Incorporated
Back to Inactve Datasheet Archive

DMN5L06WKQ (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage (1.0V max)
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable 

Application(s)

  • General Purpose Interfacing Switch

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive (Q)
Compliance (Only Automotive(Q) supports PPAP) Automotive
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.3
PD @TA = +25°C (W) 0.25
Polarity N
Compliance (Only Automotive supports PPAP) Automotive (Q)
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@5V)
|VDS| (V) 50
|VGS| (±V) 20
|VGS(TH)| Max (V) 1

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2579 2022-08-29 2023-02-28 Device End of Life (EOL)
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products