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DMN5L06KQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Application(s)

  • Load Switches
  • Level Switches

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage (1.0V Max)
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable (Note 4)

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes Y/N
VDS (V) 50 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 0.3 A
IDS @TC = +25°C (A) 300 A
PD @TA = +25°C (W) 0.35 W
PD @TC = +25°C (W) N/A W
RDS(ON)Max @ VGS(4.5V)(mΩ) 2000 (@5V) mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 3000 mΩ
VGS (th) Max (V) 1 V
CISS Typ (pF) N/A pF
CISS Condition [@VDS] (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN5L06KQ-7

DMN5L06KQ-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Future Electronics - Asia 42000 9/19/2021 Singapore Contact Sales
Request Sample

FAQs

Related Application FAQs