Diodes Incorporated
SOT23

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DMN53D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.3
PD @TA = +25°C (W) 0.52
RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@5V) mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 nC
CISS Typ (pF) 37 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products