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DMN53D0U

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Standard (Q on request)
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 50 V
|VGS| (±V) 12 ±
|IDS| @TA = +25°C (A) 0.3
PD @ TA = +25°C (W) 0.52
RDS(ON)Max @ VGS(4.5V)(mΩ) 2000 (@5V) mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 2500 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 3000 mΩ
|VGS(th)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.6 nC
CISS Typ (pF) 37

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN53D0U-7

DMN53D0U-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 536 9/28/2021 South America, North America, Asia, Europe, Middle East Buy Now
RS Components 4900 9/27/2021 England Buy Now
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products