30V N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Automotive |
---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
25 ±V |
|IDS| @TA = +25°C (A) |
8.6 A |
PD @TA = +25°C (W) |
1.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
14 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
20 mΩ |
|VGS(TH)| Max (V) |
1.6 V |
QG Typ @ |VGS| = 4.5V (nC) |
8.7 (@5V) nC |
CISS Typ (pF) |
798 pF |
CISS Condition @|VDS| (V) |
10 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2722 | 2025-02-11 | 2025-05-12 | Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products |