Diodes Incorporated — Analog and discrete power solutions
TSOT26

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DMN4060SVT

N-Channel Enhancement Mode Field Effect Transistor

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Description

This new generation 45V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld and lighten application

Application(s)

  • Handheld application
  • DC-DC Converters
  • Power management functions
  • Backlighting
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    N

    ESD Diodes (Y|N)

    No

    |VDS| (V)

    45 V

    |VGS| (±V)

    20 ±V

    |IDS| @TA = +25°C (A)

    4.8 A

    PD @TA = +25°C (W)

    1.8 W

    RDS(ON)Max@ VGS(10V)  (mΩ)

    46 mΩ

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    62 mΩ

    |VGS(TH)| Max (V)

    3 V

    QG Typ @ |VGS| = 4.5V (nC)

    10.4 nC

    QG Typ @ |VGS| = 10V (nC)

    22.4 nC

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
    PCN-2744 2025-06-04 2025-09-03 Additional Wafer Source for Select Discrete Products