Diodes Incorporated
SOT23

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DMN4035LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Battery Charging
  • Power Management Functions
  • DC-DC Converters
  • Portable Power Adaptors

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 4.6
PD @TA = +25°C (W) 1.4
RDS(ON)Max@ VGS(10V)(mΩ) 42 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 52 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 5.9 nC
QG Typ @ |VGS| = 10V (nC) 12.5 nC
CISS Typ (pF) 574 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products