Diodes Incorporated
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

U-DFN2020-6-Type-F.png
Back to MOSFET Master Table

DMN4020LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 8 A
PD @TA = +25°C (W) 2.03 W
RDS(ON)Max@ VGS(10V)(mΩ) 20 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 2.4 V
QG Typ @ |VGS| = 4.5V (nC) 8.8 nC
QG Typ @ |VGS| = 10V (nC) 19.1 nC
CISS Typ (pF) 1060 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products