Diodes Incorporated — Analog and discrete power solutions
X2 DFN1006 3

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DMN3732UFB4Q

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 4mm Ultra Low Profile Package for Thin Application
  • 6mm2 Package Footprint, 10 Times Smaller than SOT23
  • Low VGS(TH), Can Be Driven Directly from A Battery
  • Low RDS(ON)
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODESTM DMN3732UFB4Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load switches
  • Portable applications
  • Power management functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 1.3
PD @TA = +25°C (W) 1.12
RDS(ON)Max@ VGS(4.5V)(mΩ) 460 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 560 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 730 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 0.9 nC
CISS Typ (pF) 40.8 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf