Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3
30V N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Automotive |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
30 V |
|VGS| (±V) |
8 ±V |
|IDS| @TA = +25°C (A) |
1.3 A |
PD @TA = +25°C (W) |
1.12 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
460 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
560 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
730 mΩ |
|VGS(TH)| Min (V) |
0.45 V |
|VGS(TH)| Max (V) |
0.95 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.9 nC |
CISS Typ (pF) |
40.8 pF |
CISS Condition @|VDS| (V) |
25 V |
