Diodes Incorporated
X2 DFN1006 3

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DMN3731UFB4

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 0.4mm Ultra Low Profile Package for Thin Application
  • 0.6mm2 Package Footprint, 10 times Smaller than SOT23
  • Low VGS(TH), Can Be Driven Directly From A Battery
  • Low RDS(ON)
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Load Switch
  • Portable Applications
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 1.2 A
PD @TA = +25°C (W) 0.97 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 460 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 560 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 730 mΩ
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 5.5 nC
CISS Typ (pF) 73 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products