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DMN33D8LTQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

N-Channel MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN33D8LTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.2 A
P_D @T_A = +25°C (W)	0.3 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	5000 (@4V) mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	7000 mΩ
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.55 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	1.3 nC
C_ISS Typ (pF)	48 pF
C_ISS Condition @\|V_DS\| (V)	5 V

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile