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DMN33D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V N Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. 

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) On Request
Polarity N
ESD Diodes (Y|N) Yes
VDS (V) 30 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 0.25 A
PD @TA = +25°C (W) 0.52 W
RDS(ON)Max @ VGS(10V)(mΩ) 3000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 3800 (@5V) mΩ
VGS (th) Max (V) 2.5 V
QG Typ@ VGS = 10V(nC) 1.2 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN33D8LDW-7

DMN33D8LDW-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Farnell, An Avnet Company 13 9/17/2021 England Buy Now
Request Sample
DMN33D8LT-13

DMN33D8LT-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 21500 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample
DMN33D8LT-7

DMN33D8LT-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 2664 9/17/2021 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample
DMN33D8LTQ-13

DMN33D8LTQ-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Future Electronics - Asia 80000 9/16/2021 Singapore Contact Sales
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PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products