Diodes Incorporated — Analog and discrete power solutions
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

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DMN33D8L

N-Channel Enhancement Mode MOSFET

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Description

This new generation 30V N Channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. 

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.25 A
PD @TA = +25°C (W) 0.52 W
RDS(ON)Max@ VGS(10V)  (mΩ) 3000 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 3800 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 10V (nC) 1.2 nC
CISS Typ (pF) 50 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products