N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management
applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 12 ±V |
|IDS| @TA = +25°C (A) | 2 |
PD @TA = +25°C (W) | 1.3 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 150 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 200 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 250 mΩ |
|VGS(TH)| Max (V) | 1 V |
CISS Typ (pF) | 193 pF |
CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2722 | 2025-02-11 | 2025-05-12 | Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products |