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DMN3300UQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management
applications.

Application(s)

 

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

 

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The DMN3300UQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive (Q)
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 12 ±
|IDS| @TA = +25°C (A) 1.5
PD @ TA = +25°C (W) 1.3
RDS(ON)Max @ VGS(4.5V)(mΩ) 150 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 200 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 250 mΩ
|VGS(th)| Max (V) 1 V
CISS Typ (pF) 193
CISS Condition [@VDS] (V) 10

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf