Diodes Incorporated
X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

X2-DFN1006-3.png
Back to MOSFET Master Table

DMN32D2LFB4

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 0.42 A
PD @TA = +25°C (W) 0.35 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 1200 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 1500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 2200 mΩ
|VGS(TH)| Max (V) 1.2 V
CISS Typ (pF) 39 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)
PCN-2340 2018-04-26 2018-05-26 Qualification of Alternate Wafer Sources for Select MOSFET Products
PCN-2299 2018-03-01 2018-06-01 Additional Qualified (A/T) Assembly Test Site