N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 0.35 A |
| PD @TA = +25°C (W) | 0.32 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 1500 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 2000 mΩ |
| |VGS(TH)| Max (V) | 1.4 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.35 nC |
| CISS Typ (pF) | 13.6 pF |
| CISS Condition @|VDS| (V) | 15 V |
