DMN31D5UDJ

Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

General Purpose Interfacing Switch
Power Management Functions
Analog Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	0.22 A
P_D @T_A = +25°C (W)	0.35 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	1500 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	2000 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	3000 mΩ
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.38 nC
C_ISS Typ (pF)	22.6 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2582	2022-05-17	2022-08-17	Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH)
PCN-2498	2021-04-07	2021-04-07	Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products