Diodes Incorporated
SOT23

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SOT23.png
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DMN31D5L

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.5
PD @TA = +25°C (W) 0.52
RDS(ON)Max@ VGS(4.5V)(mΩ) 1500 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 2000 mΩ
|VGS(TH)| Min (V) 0.8 V
|VGS(TH)| Max (V) 1.6 V
QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
QG Typ @ |VGS| = 10V (nC) 1.2 nC
CISS Typ (pF) 50 pF
CISS Condition @|VDS| (V) 15 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products