Diodes Incorporated
Back to MOSFET Master Table

DMN313DLT

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation 30V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 0.27 A
    PD @TA = +25°C (W) 0.36 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 2000 (@4V) mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 3200 mΩ
    |VGS(TH)| Max (V) 1.5 V
    QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
    CISS Typ (pF) 36.3 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC