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DMN3110S

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 30V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application,

Application(s)

General Purpose Interfacing Switch

Power Management Functions

Boost Application

Analog Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	3.3 A
P_D @T_A = +25°C (W)	1.3 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	73 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	110 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.1 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	8.6 nC
C_ISS Typ (pF)	306 pF

Technical Documents

SPICE Model

DMN3110S.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products