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DMN3110S

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application,

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Boost Application
  • Analog Switch
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    VDS (V) 30 V
    VGS (±V) 20 ±V
    IDS @TA = +25°C (A) 3.3 A
    PD @TA = +25°C (W) 1.3 W
    RDS(ON)Max @ VGS(10V)(mΩ) 73 mΩ
    RDS(ON)Max @ VGS(4.5V)(mΩ) 110 mΩ
    VGS (th) Max (V) 3 V
    QG Typ @ VGS = 4.5V (nC) 4.1 nC
    QG Typ@ VGS = 10V(nC) 8.6 nC

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Orderable Part Number Buy from Distributor / Contact Sales Request Samples
    DMN3110S-7

    DMN3110S-7

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Digi-Key Electronics 8490 9/16/2021 Europe, Asia, North America Buy Now
    Request Sample
    DMN3110SQ-7

    DMN3110SQ-7

    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Future Electronics - Europe 3000 9/16/2021 England Contact Sales
    Request Sample

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products