Diodes Incorporated
SOT23

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DMN3110S

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application,

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Boost Application
  • Analog Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 3.3
    PD @TA = +25°C (W) 1.3
    RDS(ON)Max@ VGS(10V)(mΩ) 73 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 110 mΩ
    |VGS(TH)| Max (V) 3 V
    QG Typ @ |VGS| = 4.5V (nC) 4.1 nC
    QG Typ @ |VGS| = 10V (nC) 8.6 nC
    CISS Typ (pF) 306 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products