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DMN30H4D1S

N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Specifications

Product Parameters

Qualified to AEC-Q10x No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 300 V
|VGS| (±V) 20 ±
|IDS| @TA = +25°C (A) 0.43
PD @ TA = +25°C (W) 0.43
RDS(ON)Max @ VGS(10V)(mΩ) 4000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 5000 mΩ
|VGS(th)| Max (V) 3 V
QG Typ@ |VGS| = 10V (nC) 4.8 nC
CISS Typ (pF) 174
CISS Condition [@VDS] (V) 25

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products