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DMN30H14DLY (NRND)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Specifications & Technical Documents

Product Parameters

C_ISS Typ (pF)	96
ESD Diodes (Y\|N)	No
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	4
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V) (mΩ)	14000
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	20000
\|V_DS\| (V)	300
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMN30H14DLY.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2664	2024-02-23	2024-08-23	Device End of Life (EOL)
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products