DMN30H14DLY (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Typ (pF)	96
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_A = +25°C (A)	0.21
P_D @T_A = +25°C (W)	2.2
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	4
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V)(mΩ)	14000
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	20000
\|V_DS\| (V)	300
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMN30H14DLY.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2664	2024-02-23	2024-08-23	Device End of Life (EOL)
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products