Diodes Incorporated — Analog and discrete power solutions
SC59

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DMN3070SSN

30V N-Channel Enhancement Mode MOSFET

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Description

This new generation 30V N-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP) Standard
    AEC Qualified Yes
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 5.1 A
    PD @TA = +25°C (W) 1.3 W
    RDS(ON)Max@ VGS(10V)  (mΩ) 40 mΩ
    RDS(ON)Max@ VGS(4.5V)  (mΩ) 50 mΩ
    RDS(ON)Max@ VGS(2.5V)  (mΩ) 80 mΩ
    |VGS(TH)| Max (V) 2.1 V
    QG Typ @ |VGS| = 4.5V (nC) 6 nC
    QG Typ @ |VGS| = 10V (nC) 13.2 nC
    CISS Typ (pF) 697 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity