Diodes Menu Close
Back to N-Channel 30V

DMN3069L

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Qualified to AEC-Q10x No
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes Y/N
VDS (V) 30 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 5.3 A
IDS @TC = +25°C (A) N/A A
PD @TA = +25°C (W) 1.3 W
PD @TC = +25°C (W) N/A W
RDS(ON)Max @ VGS(10V)(mΩ) 30 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 40 mΩ
VGS (th) Max (V) 1.8 V
CISS Typ (pF) 309 pF
CISS Condition [@VDS] (V) 15 V
QG Typ @ VGS = 4.5V (nC) 4.3 nC
QG Typ @ VGS = 5V(nC) N/A
QG Typ@ VGS = 10V(nC) 8.1 nC

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products