Diodes Incorporated
Back to MOSFET Master Table

DMN3067LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Switching
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 2.6 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 67 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 98 mΩ
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 4.6 nC
CISS Typ (pF) 447 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf