Diodes Incorporated
TSOT26

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DMN3066LVT

N-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Low On-Resistance
  • Low-Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Power-management functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 3.6 A
PD @TA = +25°C (W) 1.3 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 67 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 98 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 4 nC
CISS Typ (pF) 328 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf