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DMN3061SVT

Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

Backlighting
DC-DC Converters
Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30, 30 V
\|V_GS\| (±V)	20, 20 ±V
\|I_DS\| @T_A = +25°C (A)	3.4, 3.4 A
P_D @T_A = +25°C (W)	1.08 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	60, 60 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	100, 100 mΩ
\|V_GS(TH)\| Max (V)	1.8, 1.8 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	3.5, 3.5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	6.6, 6.6 nC
C_ISS Typ (pF)	278, 278 pF
C_ISS Condition @\|V_DS\| (V)	15, 15 V

Technical Documents

SPICE Model

DMN3061SVT.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products