N-Channel Enhancement Mode MOSFET
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in general-purpose interfacing switches & power-management functions.
Compliance (Only Automotive Supports PPAP) | Automotive |
---|---|
AEC Qualified | Yes |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 2.3 A |
PD @TA = +25°C (W) | 0.77 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 59 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 98 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1.8 V |
QG Typ @ |VGS| = 4.5V (nC) | 2.9 nC |
QG Typ @ |VGS| = 10V (nC) | 5.5 nC |
CISS Typ (pF) | 223 pF |
CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2722 | 2025-02-11 | 2025-05-12 | Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products |