Diodes Incorporated
SOT23

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DMN3053L

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 4
PD @TA = +25°C (W) 1.2
RDS(ON)Max@ VGS(10V)(mΩ) 45 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 55 mΩ
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 7.3 nC
QG Typ @ |VGS| = 10V (nC) 17.2 nC
CISS Typ (pF) 676 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf