Diodes Incorporated — Analog and discrete power solutions
SC59

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SC59

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DMN3033LSNQ

N-Channel Enhancement Mode MOSFET

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Description

This new generation Small-Signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Gate Charge
  • Low RDS(ON)
  • Low Input/Output Leakage

Application(s)

  • Motor control
  • Backlighting
  • DC-DC Converters
  • Power management functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

6 A

PD @TA = +25°C (W)

1.4 W

RDS(ON)Max@ VGS(10V)  (mΩ)

30 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

40 mΩ

|VGS(TH)| Max (V)

2.1 V

QG Typ @ |VGS| = 4.5V (nC)

10.5 (@5V) nC

CISS Typ (pF)

755 pF

CISS Condition @|VDS| (V)

10 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products