Diodes Incorporated
U DFN2020 6 Type F

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DMN3032LFDBWQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switching—Ensures More Reliable and Robust Application
  • Low On-Resistance—Minimizes Power Losses
  • Low Gate Charge—Minimizes Switching Losses
  • Small Form Factor Low-Profile Package—Increased Power Density
  • Sidewall Plated for Improved Optical Inspection
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMN3032LFDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Body Control Electronics
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 5.5 A
PD @TA = +25°C (W) 1.37 W
RDS(ON)Max@ VGS(10V)(mΩ) 30 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 42 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 5 nC
QG Typ @ |VGS| = 10V (nC) 10.6 nC
CISS Typ (pF) 500 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC