Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (SWP) (Type B)

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DMN3032LFDBWQ

Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

100% Unclamped Inductive Switching—Ensures More Reliable and Robust Application
Low On-Resistance—Minimizes Power Losses
Low Gate Charge—Minimizes Switching Losses
Small Form Factor Low-Profile Package—Increased Power Density
Sidewall Plated for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN3032LFDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	5.5 A
P_D @T_A = +25°C (W)	1.37 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	30 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	42 mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	10.6 nC
C_ISS Typ (pF)	500 pF
C_ISS Condition @\|V_DS\| (V)	15 V

SPICE Model

DMN3032LFDBWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

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