Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMN3032LFDBQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust Application
  • Low On-Resistance – Minimizes Power Losses
  • Low Gate Charge – Minimizes Switching Losses
  • Small Form Factor Low Profile Package – Increased Power Density

Application(s)

  • Body Control Electronics
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.2 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max@ VGS(10V)(mΩ) 30 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 42 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 5 nC
QG Typ @ |VGS| = 10V (nC) 10.6 nC
CISS Typ (pF) 500 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Application Notes

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs