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SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

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DMN3032L

N-Channel Enhancement Mode MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery charging
  • Power-management functions
  • DC-DC converters
  • Portable power adaptors

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

5.4 A

PD @TA = +25°C (W)

1.3 W

RDS(ON)Max@ VGS(10V)  (mΩ)

31 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

45 mΩ

|VGS(TH)| Min (V)

1 V

|VGS(TH)| Max (V)

2 V

QG Typ @ |VGS| = 4.5V (nC)

5 nC

CISS Typ (pF)

481 pF

CISS Condition @|VDS| (V)

15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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