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DMN3023L

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Gate

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
VDS (V) 30 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 6.2 A
PD @TA = +25°C (W) 1.3 W
RDS(ON)Max @ VGS(10V)(mΩ) 25 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 28 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 68 mΩ
VGS (th) Max (V) 1.8 V
QG Typ @ VGS = 4.5V (nC) 8.3 nC
QG Typ@ VGS = 10V(nC) 18.4 nC

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.

FAQs

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