30V SYNCHRONOUS N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
10 ±V |
|IDS| @TA = +25°C (A) |
7.6 A |
|IDS| @TC = +25°C (A) |
15 A |
PD @TA = +25°C (W) |
1.96 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
22, 8 (@5V) mΩ |
|VGS(TH)| Max (V) |
2.1, 1.2 V |
QG Typ @ |VGS| = 4.5V (nC) |
2.8, 6.1 nC |
CISS Typ (pF) |
370/766 pF |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2628 | 2023-05-11 | 2023-08-11 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
