Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMN3010LSS

N-Channel Enhancement Mode MOSFET

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Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 16 A
PD @TA = +25°C (W) 2.5 W
RDS(ON)Max@ VGS(10V)  (mΩ) 9 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 13 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 22.4 nC
QG Typ @ |VGS| = 10V (nC) 43.7 nC
CISS Typ (pF) 2096 pF

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