Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMN3010LSS

N-Channel Enhancement Mode MOSFET

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Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

30 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

16 A

PD @TA = +25°C (W)

2.5 W

RDS(ON)Max@ VGS(10V)  (mΩ)

9 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

13 mΩ

|VGS(TH)| Max (V)

2 V

QG Typ @ |VGS| = 4.5V (nC)

22.4 nC

QG Typ @ |VGS| = 10V (nC)

43.7 nC

CISS Typ (pF)

2096 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products