Diodes Incorporated
PowerDI3333 8

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DMN3009SFGQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low On-Resistance 
  • Low Input Capacitance

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Battery

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 16 A
|IDS| @TC = +25°C (A) 45 A
PD @TA = +25°C (W) 2.1 W
RDS(ON)Max@ VGS(10V)(mΩ) 5.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 9 mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 20 nC
QG Typ @ |VGS| = 10V (nC) 42 nC
CISS Typ (pF) 2000 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2522 2021-08-24 2021-11-24 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products