Diodes Incorporated
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DMN2991UT

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.0V Max
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC Converters
  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 0.3 A
PD @TA = +25°C (W) 0.43 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 3000 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 4000 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 6000 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.35 nC
CISS Typ (pF) 21.5 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf