Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN0606-3

Back to MOSFET Master Table

DMN2991UFZQ

20V N-Channel Enhancement Mode MOSFET

Datasheet

Contact Sales

Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low Package Profile, 0.42mm Maximum Package Height
62mm × 0.62mm Package Footprint
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Maximum
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN2991UFZQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

General-purpose interfacing switches
Power-management functions
Analog switches

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	0.55 A
P_D @T_A = +25°C (W)	0.53 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	990 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	1200 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	1800 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.28 nC
C_ISS Typ (pF)	14.6 pF
C_ISS Condition @\|V_DS\| (V)	16 V

Technical Documents

SPICE Model

DMN2991UFZQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.