Diodes Incorporated — Analog and discrete power solutions
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DMN2990UFB

20V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Backlighting
  • Power Management Functions
  • DC/DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 0.78 A
PD @TA = +25°C (W) 0.92 W
RDS(ON)Max@ VGS(4.5V)  (mΩ) 900 mΩ
RDS(ON)Max@ VGS(2.5V)  (mΩ) 1200 mΩ
RDS(ON)Max@ VGS(1.8V)  (mΩ) 1800 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.41 nC
CISS Typ (pF) 31 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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