Diodes Incorporated
X2 DFN0806 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

X2-DFN0806-3.png
Back to MOSFET Master Table

DMN2990UFA

N-Channel Mosfet

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 0.51 A
    PD @TA = +25°C (W) 0.4 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 990 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 1200 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 1800 mΩ
    |VGS(TH)| Min (V) 0.4 V
    |VGS(TH)| Max (V) 1 V
    QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
    CISS Typ (pF) 28 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC